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We have carried out a detailed study on the growth of Cd-based II–VI compounds on Si substrates using molecular beam epitaxy (MBE). CdTe, CdSe, CdSeTe, and CdZnSeTe layers were nucleated and grown on Si(211) substrates in order to study a broad range of semiconductor properties, such as crystal structure, fundamental bandgap, surface morphology, and defect and dislocation density as a function of...
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