The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We report a SiC MEMS microhotplate designed for high temperature characterization of nanomaterials in transmission electron microscopes (TEMs). The microhotplate integrates, for the first time, a microheater of doped polycrystalline silicon carbide (poly-SiC) and electron-transparent windows of amorphous SiC (a-SiCx) on a freestanding membrane of undoped poly-SiC. Our work focuses on the development...
The effect of the texture of Ag/ZnO back reflector (BR) on nc-Si:H single-junction solar cell performance has been investigated systematically. Using a high textured BR, a 74% gain in short circuit current density (Jsc) was obtained over a cell made using the same recipe on specular stainless steel. However, the texture reduced the fill factor (FF) from 0.73 to 0.54. Dark current versus voltage measurements...
In this paper we have investigated the accelerated ageing of seven different thin-film module types through the use of sequential damp heat (85??C/85% RH) tests. The module types [a-Si, tandem a-Si/a-Si micro-morph a-Si/??-Si, triple junction a-Si, CIS (x2) and CdTe] were selected to cover a range of thin-film devices, materials and construction types. Sequential damp heat tests for cumulative exposure...
The results of fellow creature order in amorphous alloys from 0, 5 to 1, 0 at.% cadmium at temperatures 293, 323 K and liquidus temperature 613 K researches by method of X-ray analysis are presented in this work.
This paper studies the density-of-localized gap states (DOS) for RF sputter amorphous InGaZnO (a-IGZO) as determined from temperature dependent study of the a-IGZO thin film transistor (TFT) electrical properties. Measurements were performed on inverted-staggered RF sputter a-IGZO TFTs. The drain current (ID) versus the gate-to-source voltage (VGS) at different temperatures from 30degC up to 90degC...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.