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This letter reports on the use of quasi-coaxial vertical via transitions fabricated with a selectively anodized aluminum substrate for 3-D packages to evaluate high frequency performances. The proposed method of fabricating quasi-coaxial vertical via transitions is easier and more cost-effective than other RF MEMS processes. Vertical interconnects with embedded anodized aluminum vias are first designed...
SiOC low k (k/spl sim/3.0) ILD was successfully integrated into a 0.18 /spl mu/m Synchronous DRAM (SDRAM) with high yields in probe, backend and QA reliability tests. As a result, the bitline capacitance (Cbit) was reduced by 8%. The refresh, speed and power consumption performances were significantly improved.
The properties of ion-implanted low-k organic SOG films were investigated in detail. It was found that the organic species of the SOG were decomposed and that the film density of the SOG was increased by ion implantation. Consequently the oxygen plasma resistance of the ion-implanted SOG film was improved, and a good characteristic was obtained for via resistance. We applied the ion-implanted SOG...
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