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To discuss the electromigration reliability of the copper chip interconnect, a transient non-linear dynamic and electrical finite element framework was developed. The simulation includes two major areas: one is the impact of the electromigration caused by current density and another one is the stress-migration relate to thermal-stress distribution in Cu interconnects. It was found that compared with...
Increasing cost of gold (Au) for bonding wires and decreasing die and, therefore, bond pad size raise the demand for alternative bonding wire materials. A cheap alternative with good electrical conductivity is copper. Cu wire is harder than gold and aluminium. The material itself shows a pronounced strain hardening, so that the hardness increases significantly during ball bonding. These mechanical...
Ball bonding processes are optimized on Al pads with a 25.4 ??m diameter Cu wire to obtain maximum average shear strengths of at least 120 MPa. To quantify the direct effect of bond force and ultrasound on the pad stress, ball bonding is performed on test pads with piezoresistive microsensors integrated next to the pad and the real-time ultrasonic signals are measured. By using a lower value of bond...
In-situ observation of stress in Al interconnects under electromigration and thermal effect by using the synchrotron radiation x-ray diffraction. The test temperature was controlled by changing the current density of W (self-heating structure). The EM-induced stress was also investigated with current densities from 3times105A/cm2 to 4times106A/cm2. The conclusion agreed well with the simulation results.
In the semiconductor industry to increase the power density, improve the electrical performances and optimize the robustness in the application, more and more key roles are covered by back-end processes and in particular by bonding technology used to connect power silicon chip and metallic leadframe that for Power devices is one of more impacting process. The performed studies, evaluations and production...
This paper reports the first direct experimental measurement of electromigration-induced stress in aluminum interconnects using a series of micro-rotating stress sensors. The build up of stress gradients in interconnect metallization concomitant with back stress have been previously investigated theoretically, but experimental verification using optical or X-ray techniques has proven more difficult...
Device aspect ratios and dimensions at the contact and via levels for old and new technologies are driving PVD/WCVD-based metallization to its full limit at integrated circuits (ICs) fabrication sites (Wilson et al., 1993). Contact and via This work describes the work performed at ST Microelectronics regarding the TiN barrier film properties with respect to process variables. Single-step and dual-step...
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