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A new equivalent circuit suitable for transient simulation methodology of Gate-Grounded NMOS transistor (ggNMOS) used in Electrostatic Discharge (ESD) protection circuits is proposed in this paper. The target technology is a classical CMOS 0.25 ??m. This model, contrary to classical I-V static model, is intended to cover the dynamic comportment of the ggNMOS during all the phases of the Transmission...
The paper presents the design and implementation of input/output interface circuits, fully compatible with low-voltage differential signal (LVDS) standard. Due to the low voltage differential transmission technique, the low power consumption and high transmission speed are achieved at the same time. The transmitter is implemented by a closed-loop control circuit and an internal bandgap voltage reference,...
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