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This paper describes a highly linear two-stage power amplifier monolithic microwave integrated circuit (MMIC) for the 1.9 GHz band based on InGaP/GaAs hetero-junction bipolar transistor (HBT). For achieving the highly linear power amplifier, the active biasing circuits have been optimized for the 1st- and 2nd-stages' third-order intermodulation distortion products (IMD3s) by cancelling them each other...
This paper aimed to study the linearity in the 5.2 GHz power amplifier microwave monolithic integrated circuit (MMIC), which was performed with a 0.15 mum AlGaAs/InGaAs D-mode pHEMT technology. The power amplifier (PA) was studied taking into account the linearizer circuit and the coplanar waveguide (CPW). Based on those technologies, the power amplifier obtained the output power of 13.3 dBm and the...
In this paper we present a MMIC amplifier which demonstrates ˜12-dB gain at a center frequency of 245-GHz. The MMIC is intended to demonstrate the potential of power amplification at short-millimeter wave frequencies. Each stage of the three stage amplifier utilizes a 1:2 output split to reach a total output periphery of 80-μm. The combination of high realized gain per stage and output periphery indicate...
A 9 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for Ku band applications is presented. This two-stage amplifier with chip size of 11.12 mm2 (4.52 mm times 2.46 mm) is designed to fully match 50 ohm input and output impedance. With 8 volts and 900 mA DC bias condition, 12 dB small signal gain, 39.5 dBm (9 Watt) saturated output power with 30% power-added efficiency from 14 to 14.2 GHz can be...
This paper introduces the design techniques for a family of Wi-Fi PA with a new approach based on maximally reducing the GaAs MMIC area and resizing it with external integrated components. This paper proposes the development of a set PA for the integrated front-end module (FEM) of 802.11a/b/g/n and in the near future for 802.16d/e. In the multi-mode concept, a technological partition called the "stripped"...
A novel ultra wideband impulse radio architecture for 24 GHz-band short-range radar was developed using 0.13 mum InP-HEMT technology. The transmitter part generates an extremely wide band impulse from a pulse generator and then filters it by using a band pass filter (BPF). The obtained impulse shows a bandwidth of over 40 GHz and achieves flatness in the target band. The power amplifier (PA) for the...
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