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Similar to their plasmonic counterparts, dielectric nanoantennas have the ability to manipulate the emission properties of nanoscale emitters placed in their vicinity. Most importantly, they can increase the radiative decay rate of emitters by coupling to Mie-type resonances and/or shape the emission into directional patterns [1]. While considerable theoretical work has been dedicated to the study...
Huygens' metasurfaces that utilize tailored Mie-type resonances of dielectric particles form a versatile platform for the design of ultra-thin and highly-efficient wavefront-shaping devices [1-3]. Dielectric metasurfaces typically yield higher efficiencies than comparable plasmonic structures due to their significantly lower absorption losses. Furthermore, it was shown that the superposition of the...
An extraordinary transmission effect for terahertz (THz) waves in a complementary metallic disk and hole array was experimentally and numerically demonstrated. Moreover, this result was also theoretically confirmed that the enhanced transmission peak in this structure was contributed both by the SPPs excited on the metallic structures and also the resonance in the dielectric rod between the metallic...
Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar-and Cl-based gas mixtures), and found to depend on plasma conditions, in contrast to those with conventional SiO2. For Ar-plasma, which was confirmed to induce a larger charging damage, both n- and p-ch MOSFETs with high-k gate stacks suffer...
Continuous scaling, necessary for enhanced performance and cost reduction, has pushed existing CMOS materials much closer to their intrinsic reliability limits, forcing reliability engineers to get a better understanding of circuit failure. This requires that designers will have to be very careful with phenomena such as high current densities or voltage overshoots. In addition to the reliability issues,...
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
Capacitive humidity sensors were fabricated using countersunk interdigitated electrodes coated with amorphous nanostructured TiO2, SiO2, and Al2O3 thin films grown by glancing angle deposition. The capacitive response and response times for each sensor were measured. The sensor utilizing TiO2 exhibited the largest change in capacitance, increasing exponentially from ~ 1 nF to ~ 1muF for an increase...
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