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A vector modulator based phase shifter is developed using 0.18um CMOS process at S-band frequency to be integrated into a conformal phased array antenna to recover the desired radiation pattern in the entire 360° range. The phase shifter has a variable gain amplifier integrated into the circuit in order to vary gain along with phase for precise control to correct the degraded radiation pattern due...
This paper presents a QFN packaged phased-array RFIC for X-band applications. The transmit X-band phased array is differential except for baluns at the input and output ports. Electromagnetic simulation is done to result in low channel-to-channel coupling. Measurements show a wideband impedance match and a worst-case channel-to-channel coupling of < −29 dB at 8–10 GHz. The results show that...
This paper presents a Ka-band variable gain amplifier (VGA) fabricated in a standard 0.18-μm CMOS process using the proposed cascade amplifier method to achieve both low phase variation and good output matching capacity in a variable gain mode. The proposed VGA achieves 14.2 dB gain control range with a phase variation of 8.9°. The input and output reflection coefficients versus the gain control bias...
This paper presents a design of 60 GHz active phase shifter for next generation mm-Wave WPAN using 90 nm TSMC CMOS technology. The vector modulator based phase shifter is chosen as a prototype because it provides accurate resolution over 360 degree. The phase shifter is controlled by 5 bit digitally controlled by binary current weighted DAC. The miniaturized Marchand balun and 2 stage poly phase filter...
The paper presents a 24-27 GHz 4-channel CMOS differential phased array receiver front-end with integrated baluns, ESD protection and VGAs. The differential implementation of the phased array significantly reduces the substrate coupling effects. The measured array performance shows an input and output match of < -10 dB, 12-15 dB gain, 7.8-9.5 dB NF, an IIP3 of -9 to -12 dBm, an input P1dB of -19...
A 53 dB gain limiting amplifier for OC-192 and 10 GbE applications is developed in a 50 GHz fT SiGe SOI complimentary bipolar process, and has 5 mV pk-pk sensitivity, 1.25 V pk-pk maximum input signal, 14 ps (20/80%) rise/fall times and 450 mV pk-pk output into matched differential 50 Ohm loads, consuming 430 mW on a 3.3 V supply. Input Cherry-Hooper gain stages limit the -3 dB bandwidth to 11 GHz...
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