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We demonstrate selectively-grown GaAs nano/micro structures on silicon substrates by molecular beam epitaxy. Hexagonal or rectangular shaped GaAs crystals, depending on the orientation of the silicon substrate, were formed inside the silicon-dioxide-masked nanoholes at 630°C. Clear facets, which are the low-energy {011} planes, indicate single-crystalline nature of the growth. GaAs/InAs/GaAs structure...
Doping superlattices, or n-i-p-i crystals, have advanced properties for the development of novel optoelectronic devices. The delta-doping technology extends possibilities of the superlattice design and allows improving the characteristics compared with homogeneously doped n-i-p-i structures. For the delta-doping, molecular-beam epitaxy is most widely applied. The GaAs delta-doped superlattices were...
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