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This paper aims at reliability assessment of power semiconductor in hybrid DC switch. Design considerations of reliability issues are explained. Specific focus is given to a temperature-based condition monitoring technique via thermo-sensitive electrical parameters. VCE, td(off), and dVCE/dt of IGBT are presented as the indicator of junction temperature and calibrated. Comparative experiments with...
Compared with single-side cooling inverter, double-side cooling inverter is more advantageous for the application of electric vehicle in terms of efficient cooling performance, mechanical robustness and high power density. IGBT short-circuit fault is one of the detrimental factors to cause the whole inverter failure. From the perspective of inverter, this paper analyzed the fault condition of single...
This paper presents a junction temperature estimation model for space vector modulated IGBT inverter system for a real time implementation. Advances in power electronics, control systems, motor drives, and electrical machines helped in developing new technologies of Variable speed constant frequency (VSCF) system for more aircraft application. It is estimated that about 21% of the faults in the variable...
The pulsed power supply provides single or repeated frequency pulse energy for the load and needs the high-power switches to realize the control function. For the advantages of high reliability and small resistance, the semiconductor switch has been widely used in the pulsed power systems. The through-flow capability is an important technical parameter of the semiconductor switch, and is also the...
Switched reluctance motor system is a novel electromagnetic system with good application prospects. The loss from the power converter is one of the main issues for the design and operation of the system. In this paper, the methods to calculate the power loss of the power converter in switched reluctance motor drive are introduced. The simulation model for the whole system is built, which can calculate...
This letter presents the design, prototype development, operation, and testing of an 800 kHz, 1 kW, 800 V output boost dc–dc converter module that integrates SiC MOSFET and SiC Schottky diode die. It is observed that when the device loss is dominated by switching loss, the steady-state junction temperature of SiC MOSFET can reach as high as 320 °C. This is the highest self-heated junction temperature...
This paper presents an accurate power-loss estimation method for continuous-current-conduction-mode synchronous Buck converters. Realistic analysis for switching losses on power MOSFET has been investigated. Considering the thermal characteristic, total power loss on power MOSFETs is calculated to predict the maximum junction temperature. Theoretical analysis and experimental results are shown and...
This paper presents experimental analysis of the voltage sharing in series connected IGCTs (Integrated Gate Commutated Thyristors) and their associated freewheeling diodes. Voltage sharing is evaluated in function of three interesting parameters: junction temperatures, gate units delay and switch off currents during switch off transients. Voltage unbalance can be improved by keeping time delay difference...
The Active NPC VSC (3L-ANPC-VSC) features a higher degree of controllability than standard NPC converters, allowing a better temperature distribution among the semiconductors. With the aid of a Predictive Control strategy, a new temperature balancing method for the 3L-ANPC-VSC is introduced. The algorithm is implemented in Matlab and compared with the 3L-NPC-VSC using experimental data of 4.5kV Press-pack...
This paper presents a novel control strategy, on the example of a three-phase voltage source inverter, to increase the life-time of power semiconductor devices. Based on an online estimation of the junction temperatures the switching frequency is modified through the control to decrease thermal cycles. In addition the neutral point potential can be shifted using a flat-top method, resulting in an...
This paper proposes a novel control method of an indirect matrix converter to reduce the switching loss of inverter stage and to reduce the junction temperature at the low output frequency operation. The proposed control method achieves the zero-voltage switching (ZVS) operation in the inverter stage instead of the rectifier stage as in the conventional method. As a result, this method reduces the...
With SiC, junction temperatures of power semiconductors of more than 700?C are theoretically possible due to the low intrinsic charge carrier concentration of SiC. Hence, a lot of research on package configurations for power semiconductor operation above 175?C is currently carried out, especially within the automotive industry due to the possible high ambient temperatures occurring in hybrid electric...
IGBT is one of the key components of motor driving system for electric vehicles, and its reliability directly affects the reliability of the electric vehicles. The reliability of the IGBT is affected by the loss and the junction temperature in working condition. To predict the IGBTpsilas loss and thermal response, especially in the case of adverse dynamic conditions, the dynamic loss model and the...
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