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The model based temperature control system examined in this paper increases the expected lifetime of IGBT power modules by decreasing the magnitude of temperature swings occurring during operation. In order to achieve this goal additional power losses are produced during low load conditions. This is carried out by presetting a reactive current. The three level neutral point diode clamped three phase...
With commercial operation of the first Chinese Maglev line, lifetime prediction of power devices in Maglev choppers becomes a crucial topic. This paper adopts a mission profile of one typical Maglev chopper for lifetime prediction. A test rig is built for the IGBT/Diode case temperature measurement. Using look-up tables of IGBT/Diode losses, an accurate electro-thermal model can be established. The...
A novel online measurement unit for capturing the collector-emitter voltage during conduction mode has been developed. This is a well-known method for the health monitoring of power semiconductors and for estimating the junction temperature. This method is shown in the literature for up to 1000 V DC-link voltages. However, an online measurement for high-voltage (4.5 kV) IGBTs demands a new approach,...
This paper presents an electro-thermal based junction temperature (Tj) estimation method of insulated gate bipolar transistor (IGBT) power module. Firstly, the internal structure of IGBT and its transient characteristics are researched, through which the factors affecting the power loss as well as its basic influence rule are analyze and the multivariable loss calculation model is obtained. And then...
In the last decades, the interest in solar photovoltaic (PV) energy has increased considerable around the world. That are many publications that focus on the temperature assessment of PV modules and solar heat collectors but fewer discuss the temperature and reliability evaluation of PV-inverters components. IGBT power modules are the key components from the reliability point of view. Some solar power...
Article presents results of study to determine temperature coefficient of voltage of IGBT. Values of temperature coefficient of voltage obtained at different values of collector current in high conductivity state. Conclusions are made on impact of changes in temperature coefficient of voltage with change of collector current of converter operation in AC electric drive.
Classical approaches to the 3D thermal simulation of electronic systems require assumptions regarding the amount of power dissipated and its distribution. Errors in such assumptions are a leading cause of resulting errors in temperature rise predictions. Although 3D electro-thermal simulations can be applied; where electrical boundary conditions are specified and current density, electrical potential...
This paper proposes an online dynamic electro-thermal model to compute the junction temperature of an IGBT under real time operating conditions. The proposed computational model is based on transient thermal capacitance and power loss calculations. Insulated Gate Bipolar Junction Transistor is popularly used in mission safety critical applications such as aerospace. Usually mission critical application...
The introduction of fully electric vehicles (FEVs) into the mainstream has raised concerns about the reliability of their electronic components such as IGBT. The great variability in IGBT failure times caused by the very different operating conditions experienced and the stochasticity of their degradation processes suggests the adoption of condition-based maintenance approaches. Thus, the development...
High-current, large-area single SiC JBS diodes rated at 650V-200A and 1200V-100A were fabricated on a 150mm platform that demonstrate a low VF of 1.5V. The diodes exhibit a specific differential resistance, Rdiff, sp, of 0.74 and 1.65 mΩ-cm2, respectively. The devices were tested with similarly rated Si-IGBTs and the reduction in switching losses and QRR evaluated. The high-current diodes have also...
This work investigates the current sharing effect of a high power Soft Punch Through IGBT module in the Negative Temperature Coefficient region. The unbalanced current sharing between two of the substrates is demonstrated for different current and temperature levels and its impact on the thermal stressing of the device is evaluated. The results indicate that the current asymmetry does not lead to...
The Press-pack IGBTs is ideally suited to applications where series operation is required; this quality is of particular interest for HVDC applications where several 100 devices may be required in a single switch. To ensure continued operation between maintenance cycles it is essential that the device fails to a stable short circuit. An experiment has been conducted and is reported in this paper to...
This paper presents a model based junction temperature control system to increase the expected lifetime of IGBT power modules by using a hybrid discontinuous modulation technique. This modulation technique offers the possibility to influence the switching losses and is therefore used as a correcting variable for controlling the junction temperatures of IGBT power modules.
This paper investigates the characteristic thermal properties of IGBT power modules and develops a very robust health monitoring concept to identify an aged chip-solder within a voltage source inverter. It is shown that at an optimum excitation frequency the power module structure enables a selective identification of an increased thermal chip-solder resistance Rth, 1 with a maximum Rth, 1 measuring...
This paper deals with a new control system based on finite control set model predictive control designed for a dual voltage source inverter. The proposed control systems deals with three objectives, the first one is the output current control depending on the load current demands, the second part of the control system is balancing of power losses among the semiconductor devices using redundant switching...
A method for estimating the junction temperature based on the static and quasi-static gate-emitter threshold voltage has been previously presented. However, several questions that remained open, such as the physical meaning of the estimated temperature and influence of external parameters in the temperature estimation, are now addressed in this paper. If devices are paralleled the proposed method...
Junction temperature of insulated gate bipolar transistors (IGBTs) plays an important role in power semiconductor devices reliability. However, it is difficult to have direct access to the chip to obtain the junction temperature. This paper provides a new approach to extract the junction temperature by using combined thermo-sensitive electric parameters (TSEPs) during turn-off transient due to the...
Identification of power device failure precursors is essential for condition monitoring, fault severity assessment and lifetime estimation. These tools constitute the fundamental elements to achieve highly reliable power converters with self-diagnosis capability, which can report incipient faults at very early stage. In this paper, several discrete IGBTs are thermally aged on a custom-built modular...
This paper presents a junction temperature estimation model for space vector modulated IGBT inverter system for a real time implementation. Advances in power electronics, control systems, motor drives, and electrical machines helped in developing new technologies of Variable speed constant frequency (VSCF) system for more aircraft application. It is estimated that about 21% of the faults in the variable...
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