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Atom probe tomography (APT) was employed to investigate the precipitation process of Si3N4 particles after plasma assisted nitriding and subsequent annealing of Fe-Si alloy. The nitriding was done using 15N2 medium to enable quantitative analysis of Si and N by APT. Al, as a minor alloying element, is found to play an important role in the precipitation sequence. It is shown that Al forms Al-N clusters...
Nitriding of silicon was carried out by using an electron cyclotron resonance (ECR) nitrogen plasma. The effects of discharge pressure, substrate temperature and dc bias voltage on the nitriding were investigated. The nitriding was enhanced by the increase of nitrogen molecular ion energy, which was adjusted by a negative bias voltage, under a low pressure discharge. The nitriding was also enhanced...
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