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A simple physical model is developed to show that the “hole-in-the-inversion-layer” model for RTN is in fact correct. This simple model allows RTN amplitude for future devices to be predicted intuitively and quantitatively. The model provides additional incite into the physics of RTN in MOSFETs.
Random telegraph noise (RTN) has been shown to be a more severe scaling issue than the Random Dopant Effect (RDE). However this observation relies heavily on studies which focus only on threshold voltage (VTH) fluctuations. VTH measurements make separation of these two scaling issues (RTN and RDE) difficult. Since future scaled devices may use channels with no or low doping, it is important to examine...
We studied random telegraph noise (RTN) of n-type and p-type silicon nanowire transistors (SNWT) for the first time and derived accurate vertical and lateral trap location equations in nanowire structure. Using the derived equations, accurate trap locations were extracted in the devices with single trap as well as multiple traps.
With the event of nanoscale technologies, new physical phenomena and technological limitations are increasing the process variability and its impact on circuit yield and performances. Like combinatory cells, the sequential cells also suffer of variations, impacting their timing characteristics. Regarding the timing behaviors, setup and hold time violation probabilities are increasing. This article...
The paper presents a detailed study on the idle leakage reduction techniques on partially depleted silicon-on-insulator (PD-SOI) CMOS SRAM. The most promising leakage reduction techniques that have been proposed are introduced, analyzed and compared into 65 nm low-power PD-SOI technology, taking into account all the SOI specific effect. Especially, it is shown that the leakage reduction techniques...
While the CMOS analog circuits can be designed with the minimum-gate-length of the fabrication process in the alpha-power law MOSFET model, the length of a MOSFET gate has been chosen to be a larger scale than the minimum-gate-length in the conventional Shockleypsilas square model. In this paper, we describe a 6-b 100 MSPS CMOS current steering digital-to-analog converter (DAC) with the alpha-power...
Channel mismatch, including amplitude and phase mismatch, has severely affected the performance of space-time adaptive processing (STAP). In order to ascertain the specification of the effects on STAP, theory analysis of relation between clutter covariance matrix (CCM) with and without channel mismatch is done based on the model provided by literature, and the effect to signal is also analyzed. In...
We designed and built a novel all-optical re-timing, re-amplifying, and re-shaping (3R) regeneration system based on terahertz optical asymmetric demultiplexers (TOADs) developed in our laboratory. The system is capable of parallel processing multiple wavelengths, a feature which will significantly improve the scalability of current wavelength division multiplexing (WDM) networks. Performance against...
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