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A HEMT model is proposed that correctly isolates the access metallization from the intrinsic device to give linear scalability. The model uses a distributed network of intrinsic unit cells composed of lumped elements. The topology of these networks is determined such that a scalable set of parameters is obtained. The parameters for the intrinsic and extrinsic parts of the transistor have been extracted...
This paper presents an alternative topology for realizing a four-quadrant amplifier with single-ended output. In the proposed multiplier, constituting differential circuits are vertically arranged resulting in single-ended current output with output DC voltage equal to a half of supply voltage. Since the circuit operates in a current-reused mode, the power consumption is systematically reduced by...
Recent advancement in CMOS E-band (V-band: 50-75 GHz + W-band: 75-110 GHz) circuit design, coupled with the deployment of high-k, metal gate (HkMG) and third-generation of strain engineering in 45 nm technology node, has opened up a huge opportunity for developing sub-millimeter wave systems based solely on CMOS technology. For example, at 45 nm CMOS node, device fT can already reach 400 GHz. Besides...
This paper discusses the design of a 60 GHz low noise amplifier (LNA) using a standard low power SOI CMOS process from ST Microelectronics. First, we outline the technology as well as the mm-wave design challenges. Using recent work on coplanar waveguide (CPW) modeling, we describe how it's possible to use parametric, 3D electromagnetic simulation to complete or replace analytical models of on-chip...
This paper describes a comparative analysis between two topologies of operational amplifiers to design a 40 MS/s 12-bit pipeline analog to digital converter (ADC). The analysis includes AC and transient simulation to select the proper topology. This ADC is implemented in a 0.35 mum AMS CMOS technology with 3.3 V single power supply. The capacitors and selected operational amplifiers were scaled for...
Class D amplifiers are becoming the most feasible solution for embedded audio application. However, distortions due to the non-linear nature of switching stage are the main drawback for this amplifier topology. This paper discusses the design and implementation of high fidelity audio class D using sliding mode control scheme. This design method proves to be a cost effective solution for industrial...
A high intercept points, cost-effective, and power-efficient switching FET double balanced mixer (DBM) is reported. The Switching FET DBM demonstrated in this work offers input intercept points (IIP3) and conversion loss typically 44 dBm and 8.5 dB respectively with 15 dBm LO power for the frequency band (RF: 900-2150 MHz, LO: 850-1950 MHz, IF: 50-200 MHz). The measured interport isolation is typically...
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