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This work deals with the development and manufacturing of a Composite Right / Left Handed (CRLH) coupler structure for the millimeter-wave range. The device is made of CRLH artificial lines in a coplanar waveguide configuration (CPW). The device was processed on a 0.5 mm thick silicon substrate with a thermally grown 1 μm SiO2 layer and a 3000 Å Au / 500 Å Cr metallization layer deposited on it. The...
This paper presents the design and manufacturing of a metamaterial Composite Right/Left Handed (CRLH) directional coupler on silicon substrate in coplanar waveguide (CPW) configuration, with a frequency band between 26-28 GHz. The design makes use of 4 CRLH cells, cascaded and coupled two by two in order to obtain the directional coupler structure. The device was processed on a 500μm thick silicon...
In this work, using a coplanar waveguide employing periodically arrayed ground structure (PAGS) on silicon RFIC, a highly miniaturized and broadband on-chip impedance transformer and 90° hybrid coupler were developed for application to wireless communication system. The size of the impedance transformer was 0.01 mm2 on silicon substrate, which was 6.99% of the one fabricated by conventional coplanar...
In this paper, we describe a GaN switching device with high V± uniformity and low on-resistance using novel piezo neutralization (PNT) technique and a 76 GHz GaN power amplifier(PA) on a Si substrate using 0.15-μm-gate GaN FETs and low-loss Coplanar Waveguide (CPW) lines.
A micromachined on-wafer probe is designed, fabricated and measured at W-Band as a proof of concept for probes operating at sub-millimeter wavelengths. A fabrication process is developed to create devices that combine a waveguide probe with a GSG probe tip on a 15 μm silicon substrate. This device is housed in a metal machined waveguide block that provides mechanical support for the probe and connection...
Coplanar waveguides on silicon substrate were simulated. Using MEMS (micro-electro-mechanical system) technology, the V-shaped and W-shaped groove coplanar waveguides were implemented on silicon substrate, and its characteristic impedance was 30Ω, 50Ω, 75Ω and 100Ω respectively. In addition, the characteristic impedance of coplanar waveguide (CPW) was analyzed, and the conclusion was used to guide...
A high gain Ka-band CMOS Low-Noise-Amplifier is proposed in this paper. The CMOS LNA based on 4 stages common source structure. In each stage was connected by Stacked-Grounded-Coplanar-Waveguide transmission line structure in a 0.18-μm CMOS technology to reduce the loss from silicon substrate. The design of two stages noise matching increases the noise isolation between the gain matching stages and...
In this paper, a process to fabricate BCB/Au multilayer stack on low resistivity Silicon (Si) based on the embedded package structure is developed, especially for the first time spin coating of the dielectric material on the Si substrate. Transmission lines, including micro-strip transmission lines and coplanar waveguide (CPW) lines are designed, fabricated and characterized, which performs excellently:...
This paper proposes an innovative and convenient de-embedding method. It is based on the properties modification of a material which is integrated in the architecture of a two ports planar circuit. The main advantage of this technique is that it does not need other complementary circuits to extract the ABCD matrix of the half of the two ports circuit. It also presents a good accuracy as this method...
In this paper, design, fabrication and characteristics of a millimeter-wave band-pass filter (BPF) on 40 GHz are presented. The device was designed in a metamaterial approach being conceived as a series of CRLH CPW artificial lines. The BPF was fabricated on silicon substrate (0.5 mm thickness), for future integration in complex mm-wave circuits. In order to fabricate this device, a standard photolithographic...
BAW (bulk acoustic wave) filters have emerged as an important technology for GHz filtering components. Especially the high quality factor and the good temperature coefficient make BAW filters well suited for W-CDMA band 2 and band 3 devices. During the design phase it is essential to analyze and minimize possible loss mechanisms to meet the high requirements of these devices. Well known loss mechanisms...
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