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The SiC MOSFETs are finding their niche in 1 kV range, which is currently dominated by Si IGBTs. Thus, the frequencies of power converters could be increased remarkably and the power density could be higher. The gate driver for SiC MOSFET would affect the performance significantly, and a direct transplant of gate driver for Si MOSFET would not be reliable and efficient. This paper attempts to evaluate...
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