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We study the interface properties of 4H silicon carbide Si-face (0001) and a-face (1120) power MOSFETs using the charge pumping technique. MOSFETs produced on the a-face show a higher electron mobility than Si-face devices, although their charge pumping signal is 5 times higher, indicating a higher interface/border trap density. We show the main contribution to the interface/border trap density on...
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