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Optics for high concentration photovoltaics often delivers a non-uniform irradiance to the cell. This can be a problem for tunnel-junction interconnected (TJIC) IIIV multijunction solar cells if the resulting local photocurrent exceeds the peak tunneling current density. Current spreading in the vicinity of the tunnel junction can mitigate this effect. We use commercial software to simulate current...
We present the effect of active carrier concentration on the specific contact resistivity (ρc) of in-situ molybdenum (Mo) Ohmic contacts to n-type InAs. It is observed that, although the Fermi level pins in the conduction band for InAs, the contact resistivity decreases with the increase in InAs active carrier concentration. The lowest ρc obtained through transmission line model measurements was (0...
Based on the minority-carrier exclusion theory, a model is developed to explain the operating of GaN nanostructure based temperature sensors. The model takes into account different carrier mobility mechanisms. The modeling results show that the resistance of sensor strongly are dependent on GaN doping density and the length of sensor.
There is great interest in SiGe/Si heterojunction tunnel diodes for novel devices such as sharp subthreshold slope MOSFET's. High tunneling current densities are a clear goal (for MOSFET drive current, e.g.). This work presents two clear results: (i) a direct measurement of the dependences on bandgap (Ge fraction) of the direct tunneling current vs. the "excess" defect-assisted tunneling...
The proposed InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors (DHBTs) exhibit a rather high current gain despite the use of a highly doped and thick InGaAsSb base layer, indicating that a high minority carrier lifetime exists in the InGaAsSb material. A high current gain over sheet resistance ratio, low cross-over current and a wide constant current gain range have been achieved, suggesting...
High mobility III-V compounds is a strong contender for extending high performance logic beyond the 22 nm technology node. However, demonstrations of exceptional III-V performance required device footprints on the mum-scale despite nm-scale gate lengths, in order to avoid source/drain shorting during contact alloying. The scaling of III-V FETs is severely limited by the unacceptably large lateral...
InGaN/GaN MQW LEDs grown by MOCVD with undoped and Si-doped barriers were investigated. It is found that the electrical characteristics are influenced intensively by the diffusion and compensation of Si and Mg dopants.
Vertical n-p junction diodes were fabricated by Si+ ion implantation into Mg doped p/p+ GaN, followed by rapid thermal annealing at 1260degC in NH3/N2 for 30 s. Implantations were performed at 40, 60 and 80 keV and circular contacts on the n-region were fabricated with various diameters between 100 and 600 mum. Light emission from the periphery of the contact under forward bias conditions confirmed...
The static gain characteristics of NpN InP/GaAsxSb1-x/InP double heterojunction bipolar transistors (DHBTs) were studied as a function of the base arsenic (As) mole fraction x. Compared to the devices with a lattice-matched base (x=0.51), a current gain improvement arising principally from a base current reduction is observed in DHBTs having higher As- base mole fractions (and consequently, with a...
The static gain characteristics of NpN InP/GaAsxSb1-x/InP double heterojunction bipolar transistors (DHBTs) were studied as a function of the base arsenic (As) mole fraction x. Compared to the devices with a lattice-matched base (x=0.51), a current gain improvement arising principally from a base current reduction is observed in DHBTs having higher As- base mole fractions (and consequently, with a...
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