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The softness and the switching losses are the key characteristics to evaluate the quality of the ultra voltage power diodes, especially for high frequency application. In this paper, we applied the Controlled Injection of Backside Holes (CIBH) structure to the 10kV SiC diode based on TCAD, by which, the softness and snap-off characteristics of the diode is significantly optimized compared with conventional...
A novel diode with a unique trench shape is predicted by TCAD simulation to have high performance. The novel 600V vertical PiN diode with hole pockets by the Bosch deep trench process shows a better trade-off curve between reverse recovery loss and forward voltage. The reverse recovery loss is reduced by half. In addition, the active chip size of the novel diode is reduced to two-thirds that of the...
Reverse-conducting IGBTs (RC-IGBTs) allow the modulation of plasma concentration in diode mode. This can be utilized to put the device in a low saturation mode during conduction in diode direction and to reduce the charge before reverse-recovery. [1] This paper gives an insight into the plasma modulation during the desaturation time and the lock time of RC-IGBTs in diode mode. The influence of these...
This paper deals with reverse recovery and snappiness in high voltage PiN diodes as the ones currently used in high power electronics applications. It suggests a practical quantitative definition for the occurrence of snappiness and investigates unusual phenomena that might occur during reverse recovery.
This paper illustrates several issues that a user of high voltage PiN diodes may encounter in actual application conditions. It shows that high-voltage power diodes require specifiable on-time prior to entering their reverse recovery phase and offers 1D device simulations and measurements taken on several actual high power diodes to illustrate and explain all the concepts introduced.
In this paper, the application of a combined high temperature (1550°C) thermal oxidation / annealing process has been applied to 4H-SiC PiN diodes with 110 µm thick n-type drift regions, for the purpose of increasing the carrier lifetime in the semiconductor. PiN diodes were fabricated on lifetime-enhanced 4H-SiC material, then were electrically characterised and compared against fabricated control...
An analysis technique for electromagnetic compatibility with recovery-diode model is proposed. The accuracy of the recovery-diode model is evaluated by comparison with measurement. Electromagnetic noise caused by the reverse recovery of the diode was predicted by the model, and countermeasures were implemented on the basis of the model's predictions.
The switching softness of high-voltage power diodes is significantly influenced by the design of the field-stop layer and its dopant atoms. The influence of the energy levels of selenium — used as donor in the field-stop layer — on the turn-off behaviour of CIBH diodes has been investigated by DLTS-measurements and device simulations.
This paper deals with investigation of dynamic behavior of perspective power diode structures. Main scope is research of impact of diode's dynamics on the efficiency of switched mode power supply suited for dedicated application. In principle, the investigation of dynamic behavior was made in order to find out dependence of diode losses on the switching frequency and supply voltage. Quantification...
Proper scaling of single chip measurements to module-level is an important task during the development of power semiconductor chips. In this paper it is shown how different the comparison between the reverse recovery behaviour of diodes in a conventional IGBT module and of the diode-mode of RC-IGBT can be on chip-level and on module level. The reason for these differences is, that in a conventional...
Often data sheets provide only poor information about the recovery behavior of ultra-fast diodes. On the other hand, existing diode models do not predict the real characteristic of all diodes. Nevertheless, due to its importance, this behavior needs to be known and therefore measured. For this purpose, a fully automated measurement set-up for determining the reverse recovery characteristic of ultra-fast...
The voltage-doubler provides an additional step-up gain on top of that of the boost converter, while distributing voltage stresses on devices as well. The interface between the boost converter and the voltage-doubler is accomplished by a transformer and a balancing capacitor, which also constitute a resonant tank. Since this resonant operation shapes the current sinusoidal, a switch turn-off loss...
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