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We present an ab-initio calculation of the electronic structure near the interfaces of the Fe O -MgO-Fe O magnetic tunnel junction, and we give a clear description of the interface states which can exist in this device. We describe in particular the decay rate of these localized states on both sides of the interface. These interface states participate to the tunnel current across the MgO barrier and...
Magneto-transport measurements are performed on the AlGaAs/GaAs quantum Hall (QH) devices fabricated recently by our group. A series of Hall plateaus are observed with increasing the perpendicular magnetic field, and the mobility gaps resulting from localization effects are investigated at the minima in the longitudinal resistivity. Only the gap corresponding to the filling factor i = 2 is close to...
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