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Photovoltaic properties of nitrogen doped amorphous carbon (a-C:N) thin films deposited on p-type silicon (p-Si) and quartz substrates by microwave (MW) surface-wave plasma (SWP) chemical vapor deposition (CVD) at low temperature (<100 degC) are analyzed in this section. Argon (Ar: 200 sccm), methane (CH4:10 sccm) and nitrogen (N: 5 sccm) were used as carrier, source and doping gases respectively...
Phosphorus-doped carbon (n-C) films are deposited on p-type silicon substrate by pulsed laser deposition technique using a camphoric carbon soot target. The band diagram of the n-C/p-Si heterojunction has been constructed from temperature dependence conductivity and optical gap measurements. We have estimated a simple discontinuity in conduction band. The conduction band discontinuity is small (0...
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