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Laser-induced, time-resolved charge-collection measurements for In0.33Ga0.76Sb p-channel MOSFETS are reported for two different device structures; a buried-channel (quantum well) and surface-channel design. The charge-collection transient response is reported for different gate bias conditions. The two structures reveal dramatically different charge-collection transient response. The buried-channel...
The first ion-induced, time-resolved charge-collection measurements for p-channel AlGaSb/InGaSb field-effect transistors are reported. The transient response reveals two distinct decay regions; a fast initial decay (< 1 ns) followed by a slower decay (> 10 ns). The slow decay is associated with charge enhancement processes, which are explained by electron trapping and de-trapping via deep-level...
This paper gives an overview on tests done at ESA/ESTEC related to the safe operating area of two different types of GaAs MESFET when subjected to heavy ion bombardment while loaded with RF signal. The heavy ion test campaigns are described and waveform measurements defining the safe operating area for the two types of devices are discussed. The principal interest of performing radiation tests under...
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