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This paper demonstrates successful fabrication of AlGaN/GaN high-electron-mobility transistors (HEMTs) with an AlGaN barrier layer directly regrown on a reactive-ion-etched GaN layer. The HEMT device fabricated on a high-mobility (>1000 cm2/Vs) GaN channel exhibited fairly excellent pinched-off characteristics with a maximum drain current of 90 mA/mm, whereas the device fabricated on a low-mobility...
Wide Band (W-Band) Metal Oxide Semiconductor with High Electron Mobility Transistor was purposed on the AlxGa1−xN/GaN heterostructure with 25nm, 30nm, 35nm and 40nm AlxGa1−xN layer thickness, respectively. AlxGa1−xN/GaN MOSHEMT with thicker AlxGa1-xN layer shows better RF characteristics than other thinner AlxGa1−xN layer, due to better removal of short channel effect. In case of 40nm thickness, maximum...
In this paper we have improved the DC characteristics of conventionally used AlGaN/GaN High electron mobility transistor (HEMT) by inserting an oxide layer (HfO2) in between the metal gate and the AlGaN barrier layer. The analysis of DC characteristics of newly simulated AlGaN/GaN metal oxide semiconductor High electron mobility transistor (MOSHEMT) device shows enhanced performance in comparison...
AlGaN/GaN nanowire omega-FinFETs have been fabricated and characterized. Tetramethylammonium hydroxide (TMAH) lateral wet etching and atomic layer deposited (ALD) HfO2 sidewall spacer result in very sharp vertical edges and fin widths from 200 nm down to 30 nm. Omega-gate structure exhibits excellent gate controllability and separates the channel from the underlying thick GaN buffer layer, which leads...
This paper reports the theoretical analysis of substrate (Sapphire, Si, SiC, Diamond) effects on the saturation drain current and transconductance of Al.27Ga.73N/GaN high-electron mobility transistor using analytical approach. This model includes polar optical phonon scattering, source-drain resistance and self-heating effects with a wide temperature ranges. It is found that substrates have significant...
We are reporting the 2DEG mobility and sheet carrier concentration behavior of AlGaN/GaN HEMT stacks that are grown on different kinds of transitions from AlN buffer to epi-GaN. The role of each transition in terms of interfacial roughness and epi-GaN crystallinity are discussed. Further, the observed material parameters are correlated with the HEMT 2DEG property. Enhancement in 2DEG mobility was...
In this paper, a novel back gated AlGaN/GaN High Electron Mobility Transistor (HEMT) structure is proposed for detection of biological molecules such as nucleic acids (DNAs, RNAs). The proposed device consists of a thin film layer of AlGaN on top of a GaN thin film layer grown on a substrate such as sapphire or silicon, wherein the substrate is completely back etched exposing the GaN surface for attachment...
A physics-based analytical modeling for the gas sensor application of AlGaN/GaN heterostructure Schottky diode has been investigated for high linearity and sensitivity of the device. The heterointerface and surface properties are exploited here. The dependency of 2DEG on the surface charge, which is dependent on the Si3N4 passivation layer, is mainly utilized to model the device. The simulation of...
This work compares the DC and RF performance for Single Gate(SG) field plated AlGaN/GaN High Electron Mobility Transistor (HEMT) with a Dual Gate(DG) field plated High Electron Mobility Transistor. The maximum drain current obtained for AlGaN/GaN DG field plated HEMT is 1057mA/mm at Vgs=0V and Vds=10V, which is of 396mA/mm for AlGaN/GaN SG field plated HEMT. The maximum transconductance for Dual-Gate...
A new HEMT structure is proposed by introducing a low band gap InGaN layer at the heterointerface of an AlGaN/GaN structure. The characteristics of the 2-Dimensional Electron Gas (2DEG) confined in the proposed structure are explored through self-consistent solution of Schrödinger and Poisson's equations. The results show that there is a remarkable improvement in the electron density leading to better...
A new GaN-based high electron mobility transistor (HEMT) structure is proposed to study DC, RF and microwave characteristics using TCAD tool and propagation delay model. The proposed device is embedded into the circuit and its circuit characteristics are also studied and presented in this paper. Apart from DC and small-signal characteristics, we have investigated various microwave parameters such...
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