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We have designed a high breakdown yielding AlGaN/GaN HEMTs on 4 inch silicon wafer without using a field plate or increasing the gate-drain length (Lgd). Our approach is based on improving the total thickness (Tgd) of the AlGaN/GaN epi-layers as high as 9 μm which improves the quality of i-GaN. Growing i-GaN on thick buffer reduces the dislocation density, increases the resistance between the surface...
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