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We show that aluminum oxide (Al2O3) layers deposited by thermal as well as by plasma-assisted atomic layer deposition (ALD) are very well suited for the effective surface passivation of p-type silicon wafers. Surface recombination velocities (SRVs) well below 10 cm/s are measured for both ALD variants. The SRV strongly increases with decreasing film thickness if the Al2O3 films are <;10 nm for...
The properties of boron nitride (BN) films cyclically-deposited by means of PECVD have been studied. Cyclical deposition is critical to improve the density and reduce the k of the material. When compared to conventional SiCN barriers, this material demonstrates greatly reduced leakage, superior mechanical properties and better etch selectivity. Therefore, BN is a promising candidate as a low k dielectric...
Zinc-tin-oxide (ZTO) thin film transistors (TFTs) with atomic layer deposition (ALD) Al2O3 gate dielectrics were fabricated and compared to devices with PECVD SiO2 gate dielectrics. The Al2O3 devices showed acceptable mobility (~14 cm2/V??s), subthreshold slope (~0.4 V/dec), and ION/IOFF (~107). However, a pronounced positive VT shift was observed during initial gate voltage sweeps, consistent with...
Suppression of thermal interface degradation, especially silicidation, in high-k film (ZrO2, HfO2)/Si systems by a helium (He) process, which adds He gas during various annealing processes, was demonstrated. The high-k film/SiO2/Si thermal interface stability was investigated in terms of N2, and He gas annealing with controlled oxygen partial pressure (PO2) at 920degC. A comparison of N2 and He annealing...
Excellent and thermally stable surface passivation of SiN/sub x/:H grown using N/sub 2/ and SiH/sub 4/ as precursor gases has been obtained with microwave PECVD. The thermal stability of the surface passivation is even better than that for layers deposited with NH/sub 3/ and SiH/sub 4/. Additionally, we found that the bulk passivating properties of SiN/sub x/:H deposited with N/sub 2/+SiH/sub 4/ are...
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