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Electrical activation studies of Si-implanted AlxGa1−xN with an Al mole fraction of 11% to 51% have been carried out as a function of ion dose and annealing temperature. The AlxGa1−xN samples were implanted at room temperature with Si ions at 200 keV in doses ranging from 1 × 1014 cm−2 to 1 × 1015 cm−2, and subsequently annealed from 1100°C to 1350°C for 20 min in a nitrogen environment. The...
Electrical activation studies were carried out on Si-implanted Al0.33Ga0.67N as a function of ion dose, annealing temperature, and annealing time. The samples were implanted at room temperature with Si ions at 200 keV in doses ranging from 1 × 1014 cm−2 to 1 × 1015 cm−2, and subsequently proximity-cap annealed from 1150°C to 1350°C for 20 min to 60 min in a nitrogen environment. One hundred percent...
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