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In this paper, we have investigated bulk trap and interface trap density (Dit) caused by millisecond annealing (MSA) using gate current fluctuation (GCF) and charge pumping measurements. We show that the high energy flash lamp annealing (FLA) creates the GCF with a long duration time and it is critical issue to get a stable SRAM operation. FLA creates interface traps localized at the gate edge of...
In this paper, the dynamic negative bias temperature instability (DNBTI) characteristics of p-MOSFET with N-plasma SiON dielectric are studied. Under dynamic stress, the nearly consistent frequency dependent characteristics of threshold voltage shift (DeltaVth) and interface trap density (DeltaNit) were observed. The results show that the degradation and recovery of DNBTI are still dominated by the...
SiON gate dielectric is optimized for general purpose 65 nm node applications by using a first nitridation approach. A process parameter screening is done where the resulting SiON films are analyzed by angle resolved XPS and non-contact probing by Quantox. Good correlation between XPS and Quantox results are found. We demonstrate also correlation between Quantox results and transistor performance...
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