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This paper presents metal oxide semiconductor field effect transistor (MOS-FET) RDSon resistance evaluation in order to perform the MOS-FET current-measurement. For calculation of RDSon the thermal model of the MOS-FET is explored. For accurate RDSon evaluation in the real time the voltage UDSon is measured during the switch-on transistor operation mode. This measurement is synchronized by PWM triggering...
In the paper the dc measurement method of thermal resistance of the IGBT is presented. The possibilities of selection of a thermally sensitive parameter and a manner of realization of the method are discussed. The correctness of the presented method was verified with the use of infrared measurements. The influence of the selected factors on the measurement error of the thermal resistance is analyzed.
The large temperature gradients experienced by thermoelectric modules induce significant thermal stresses which eventually lead to device failure. The impact of thermal cycling on a commercial thermoelectric module is investigated through characterization of the electrical properties. In this work, we measure the evolution of the thermoelectric and electrical properties with thermal cycling. One side...
The dc performance of a widely-used high-accuracy commercial thermal transfer standard is found to be significantly affected by a variable contact resistance on its lower impedance ranges. This has a direct impact on the AC voltages measured by the instrument on these ranges. Cleaning the contacts and ensuring clearance around an input common mode choke effectively resolves the problem.
Cooling is important to keep the temperatures of the highly integrated silicon electronic devices and power devices e.g. power MOSFET, IGBT. Yamaguchi et al. have proposed a new scheme to cool down the devices by its own current named ldquoself-cooling devicerdquo, in which the cooling process uses Peltier effect. In the proposed scheme, we should use the materials that have high thermal conductivity,...
The present work aims at studying the cooling performance of a thermoelectric device that integrated with integrated heat spreader (IHS) on a flip-chip plastic ball grid array (FC-PBGA) package. The new thermoelectric device herein is fabricated on the metal substrates by flip-chip assembly process. Thermal performance of the new package was comprehensive studied. The thermal resistances of IHS with/without...
In this study, we fabricated in-plane thermoelectric micro-generators (4 mm times 4 mm) based on bismuth telluride thin films by using flash evaporation method. The thermoelectric properties of as-grown thin films are lower than those of bulk materials. Therefore the as-grown thin films were annealed in hydrogen at atmospheric pressure for 1 hour in a temperature range of 200 degC. to 400degC. By...
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