The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Isolated DC-DC conversion with high power density is widely achieved by DC to high-frequency AC conversion, followed by isolation and high frequency rectification. Selection of high-performance diodes for such high-frequency rectification is challenging as a trade-off is often required among numerous conflicting parameters. Three high performance diodes, namely, an ultra-fast silicon diode, a super...
The paper deals with the thermal properties of Ag sintered layer used as interconnect material for SiC die assembly to DBC substrate. In our investigation an IR camera were used for measurement of thermal properties of Ag sintered layers. The changes of thermal conductivity were measured in temperature range from 69°C up to 221°C. The thermal conductivity of Ag sintered layers thickness 15 μm, made...
The paper deals with the nonlinear compact thermal model of SiC power semiconductor devices based on the Cauer network. The analytical description of the model and the method of the model parameter estimation are presented. The accuracy and usefulness of the model is verified experimentally for the Schottky diode and MESFET transistor at their various cooling conditions.
The paper deals with modelling non-isothermal characteristics of SiC power Schottky diodes. In the paper the D.C. electrothermal model of the investigated devices included the self-heating phenomenon was presented and experimentally verified. The model was formulated for SPICE. The evaluation of the accuracy of the elaborated model has been performed by comparison of calculated and measured D.C. characteristics...
In the paper the problem of modelling DC characteristics of SiC power Schottky diodes with thermal effects taken into account is considered. The electrothermal model of the investigated devices was formulated for SPICE and experimentally verified. The evaluation of accuracy of the elaborated model has been performed by comparison of measured and calculated characteristics of a selected SiC power Schottky...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.