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A comprehensive nonlinear model of GaAs resistor is developed based on DC, pulse and power measurements. The model accounts for electrical and thermal feathers such as velocity saturation, self-heating and breakdown effects. The resistor nonlinearity is mainly due to the velocity saturation, and enhanced by self-heating effect. The model provides accurate performances in DC, transient and harmonic...
A recently introduced InGaP/GaAs BiFET process allows the integration of a JFET device with a standard HBT process. This JFET device, also called a voltage variable resistor (VVR), can be utilized in bias control circuits on the same die as HBT power amplifiers. An innovative modeling solution was developed to simulate temperature and surface state mechanisms related to device performance. For this...
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