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The results of an experimental study of influence of annealing temperature on magnetoresistance of ultrathin Fe and Co films are discussed. It was found that the tunnel magnetoresistance is implemented for the as-condensed Co and Fe films in the range of thickness of dCo = 5−25 nm and dFe = 7−30 nm. The annealing at the temperature of 700 K does not change the type of magnetoresistance for Fe films...
TiO2 were deposited by using one of the sol-gel methods, the spin coating method. The speed of the spin coater used can be adjusted up to 8000rpm, but in this study only 1000rpm, 2000rpm and 3000rpm was used. There are 3 level of speed with different annealing temperature to provide a fine differentiation in between each parameter. These parameters will be characterized by current-voltage (I–V), Atomic...
This paper reports on the effect of annealing temperature on the photoluminescence (PL) properties of ZnO thin film. Sol-gel spin coating method was used to prepare the ZnO templates on silicon substrate. ZnO thin films were then deposited by thermal chemical vapor deposition technique by using Zinc Acetate dihydrate as a precursor. Deposited films are annealed at various temperatures; from 650°C...
The optical properties of ZnO thin films grown by sol-gel method on quartz wafers were studied using photoluminescence measurements for optical properties. The structural properties of the ZnO thin films were carried out using X-ray method. The effects of the thickness variation and annealing temperature on the crystallinity parameters were observed. A strong dependence of the films structure, the...
This work measures both the out-of-plane and the in-plane thermal conductivities of Ge2Sb2Te5 (GST) films in the amorphous (a), face-centered-cubic (c), and hexagonal close packed (h) phases using the 3?? method. The out-of-plane thermal conductivity, kz, is first measured from a wide heater. The data include 0.17 W/mK for a-GST, 0.55 W/mK and 1.01 W/mK for c-GST of annealing temperature 150??C and...
We have measured the terahertz transmittance of NiOx thin films grown on Si by thermal evaporation. The frequency-dependent conductivities were determined without resorting to a Kramers-Kronig analysis. Large changes in these spectral functions occurred due to varying deposition rate and annealing temperature. We observed a direct correlation between these parameters with the electronic and optical...
Intrinsic Si0.5Ge0.5 thin films were deposited on Si wafer substrates by RF sputtering in various substrate temperatures, film thickness and Ar (or Ar-H2) sputtering atmosphere for photovoltaic applications. The as-deposited films were annealed at different temperatures from 850??C to 1000??C. Effects of deposition parameter and annealing temperature on structural properties of the samples were studied...
The temperature dependant electrical properties of InSbN alloys fabricated by directly nitrogen ion implanted into InSb substrate are investigated using Hall effect measurement. Intrinsic behavior is observed in the high temperature range (180-300 K). Higher nitrogen doping level and annealing temperature will result in lower electron carrier concentration. Phonon scattering dominates.
Hafnium oxide (HfO2) is successfully used as gate insulator for fabricating metal-insulator-SiC (MISiC) Schottky-diode hydrogen sensor. Sensors undergone N2 annealing at different temperatures are fabricated for investigation. The hydrogen-sensing properties of these samples are compared with each other by taking the measurements at high temperature under various hydrogen concentrations using a computer-controlled...
In this study, we fabricated in-plane thermoelectric micro-generators (4 mm times 4 mm) based on bismuth telluride thin films by using flash evaporation method. The thermoelectric properties of as-grown thin films are lower than those of bulk materials. Therefore the as-grown thin films were annealed in hydrogen at atmospheric pressure for 1 hour in a temperature range of 200 degC. to 400degC. By...
In this work MOS capacitors with anodic oxides (9 nm) were elaborated.The anodic silica films (SiO2) were produced by anodization of monocristalline silicon wafers in pure water in an electrolysis cell (P.T.F.E) at ambient temperature, with a constant current density of 20 muA/cm2. Film thickness increases linearly as a function of total charge during oxidation. The oxides are characterized by current-voltage...
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