The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We present a detailed study of ρxx and ρxy measured on a large high-quality epitaxially grown graphene sample. We have investigated the bias current, temperature, and magnetic field dependence and demonstrate quantization better than 1 part in 108. This level of accuracy easily satisfies all the usual criteria for reliable traceability based on the quantum Hall effect.
This paper describes the research activity in progress at INRIM about graphene-based devices. This study, aimed at the realization of new quantum resistance standards, involves both the fabrication and the measurement of the devices. The various technological steps needed to obtain a characterized quantum Hall effect device on graphene will be illustrated.
We report on quantization tests of the quantum Hall effect in monolayer and bilayer graphene based devices which are fabricated from natural graphite by micromechanical exfoliation. Measurements of the Hall resistance RH with relative uncertainties in the range of 10-7 performed using a cryogenic current comparator based resistance bridge have been combined with high-precision longitudinal resistance...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.