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Tungsten trioxide (WO3) thin films with Pt and Cu electrodes are characterized regarding the suitability for nonvolatile memory applications. Cells down to 70 ?? 70 nm2 are fabricated by a combination of e-beam and nanoimprint lithography. The electrical measurements reveal good properties with switching currents of only 500 nA, fast SET and RESET switching down to 5 ns and retention for 104 s with...
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