The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper we carry out study of the Field Plate (FP) effects on AlGaN/GaN HEMTs (high electron mobility transistors) by modeling the electric field in the structure FP-HEMT (with Field Plate). It consist to analyze the maximum of the electric field according to the gate voltage and drain voltage taking into account several technological parameters of the Field Plate such as the passivation layer...
An analytical approach for calculating the electric field and designing field plates (FP) for reducing the peak electric field in the channel and at the surface of high electron mobility transistors (HEMTs) for a given gate and drain voltage is presented in this paper. The difference caused by the field plate is better demonstrated by the electrical field distribution in the channel. A 50% reduction...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.