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Low-threshold field emission is the intrinsic property for nanocarbon materials. Emission characteristics of planar field cathodes with carbon nanotubes (CNT) deposited from solution to Si, Al, Pd substrates were studied. The field emission threshold value for horizontally aligned CNT was found as low as 4 V/μm. However, the field enhancement in these samples is negligible (<10). We propose to...
Ordered GeSi nanoislands were fabricated in combination of self-assembly and nanosphere lithography on Si (001) substrates. Well ordered pits in a hexagonal lattice on Si (001) substrates are readily obtained via nanosphere lithography. The preferential nucleation of GeSi nanoislands in the pits results in laterally ordered nanoislands on such prepatterned Si (001) surface during Ge deposition. Multilayer...
Hydrogenated silicon (Si:H) thin films were deposited at a selected argon diluting ratio under varied RF power density and the influence of it on nanocrystallization was studied by XRD, FTIR and Raman spectroscopy.
The structure of hydrogenated amorphous silicon (a-Si:H) thin films embedded with nano-crystal grains deposited by conventional radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) through decomposition of silane diluted with argon has been studied by X-ray diffraction (XRD), Fourier transform infrared (FTIR) and Raman spectroscopy. It is observed that argon as dilution gas plays...
The influence of irradiation with Xe ions, 130 MeV on SiO2 layers, either implanted with Si or implanted with Si and subsequently subjected to annealing at temperature of 1100degC was examined by photoluminescence. Initially, the photoluminescence band near 660 nm was observed in non-annealed layers. The irradiation with the low doses of Xe ions didn't change its intensity. The band disappeared after...
In this work, we have successfully demonstrated SONOS memories with embedded Si-NCs in silicon nitride by in-situ deposition method. The self-assembly silicon nanocrystals were in-situ deposited within the Si3N4 storage layer by dissociation of dichlorosilane (SiH2Cl2) gas to a high density of 9 times 1011 cm-2. This new structure exhibits larger memory windows for up to 6 V, better program/erase...
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