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Hyperdoping silicon with transition metals offers the potential of subbandgap photodetection, but metal impurities can be difficult to kinetically trap. Instabilities during solidification introduce large length-scale defects. We present guidelines for avoiding these instabilities, and electronic properties for layers that do not exhibit them.
Recombination active defects are found in as-grown high-purity Czochralski (Cz) and Floating Zone (FZ) n-type silicon wafers. Due to their low concentrations, the observed defects are unlikely to be identified through Deep-Level Transient Spectroscopy (DLTS) or Electron Paramagnetic Resonance (EPR), hence we use photoluminescence imaging, lifetime spectroscopy, and defect imaging along the ingot to...
We investigated the transmission enhancement and the suppression in rectangular holes array at terahertz range. Experiments and simulations verified that the metal film perforated with rectangular holes array had the shape resonance and the Wood-Rayleigh anomalies. With the development of previously reported theory, we explored the contribution of the shape of single hole and the periodicity of array...
The atomic cluster models of (110) surface of RhxPt1−x disordered binary alloy were constructed under the condition of O adsorption or not, and the coverage rate of O is 0.5. Also the (510)[1] step surface were constructed on each model. The environment sensitive inlaid energy (EESE) and the electronic structure of the (510) step surface of O/RhxPt1−x system were calculated by Recursion method. The...
Recent LSI technologies require the introduction of a wide variety of materials and structures in addition to conventional aggressive down-scaling. As a result, present semiconductor devices contain various kinds of nano-scale interfaces and nano-structures. In this paper, we show that conventional physics concepts cannot be applied directly to these interfaces or structures and that construction...
Process scaling is well know to increase overall chip-level soft error rates (SER) if no additional mitigation techniques are applied [Seifert04]. The purpose of this study is to summarize recent investigations conducted by the author to characterize the SER benefits and limitations of one particular SER mitigation technique: radiation hardened sequentials that utilize local redundancy. The studied...
This paper reviews recent experimental confirmations that the intrinsic radiation robustness of commercial CMOS technologies naturally improves with the down-scaling. When additionally using innovative design techniques, it becomes now possible to assure that performance and radiation-hardness are both met. An illustration is given with an original nano-power and radiation-hardened 8 Mb SRAM designed...
Continuous scaling, necessary for enhanced performance and cost reduction, has pushed existing CMOS materials much closer to their intrinsic reliability limits, forcing reliability engineers to get a better understanding of circuit failure. This requires that designers will have to be very careful with phenomena such as high current densities or voltage overshoots. In addition to the reliability issues,...
To increase memory bandwidth with minimum area overhead, the new concept of 3D-stacked memory structure consisting of a small sense amplifier shared with a few 3D memory cells has been presented. The 16 bit 3D-stacked TiO2 memory chip was fabricated and demonstrated. The estimated bandwidth per unit area of 3D-stacked memory in sub-65 nm CMOS technology indicates that the 3D-stacked memory has potential...
This paper presents an analytical modeling of ballistic and quasi-ballistic transport, implemented in Verilog-A environment and used for circuit simulation. Our model is based on the Lundstrompsilas approach and uses an expression of the backscattering coefficient given by the flux method. The model takes also into account short channel effects and tales into account the effects of different scattering...
A theoretical model is proposed in this work for an evaluation of the specific heat and Debye temperature of thin-film semiconductors. In the model, the specific heat contributed by the confined acoustic phonons is calculated first. An effective Debye temperature is then defined by fitting the conventional Debye model to the calculated specific heat. It is found that the so-defined Debye temperatures...
In this study, we fabricated in-plane thermoelectric micro-generators (4 mm times 4 mm) based on bismuth telluride thin films by using flash evaporation method. The thermoelectric properties of as-grown thin films are lower than those of bulk materials. Therefore the as-grown thin films were annealed in hydrogen at atmospheric pressure for 1 hour in a temperature range of 200 degC. to 400degC. By...
Summary form only given. The use of planar microcavity structures to control spontaneous emission from optical devices is now a well-established technique. The simplest geometry is that of a pair of planar mirrors separated by a distance of order the wavelength of light, with the emissive species situated between the two mirrors. It has been clearly demonstrated that the boundary conditions imposed...
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