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The paper demonstrates the mue anisotropy in (110) ultra-thin body nFETs for the first time. It is found that lang110rang mue is higher than lang100rang mue in an ultimately thin SOI nFETs, though lang110rang mue is smaller than lang100rang mue in bulk or relatively thick silicon-on-insulator (SOI). Result reveals that this is opposite to (110) bulk nFETs, which is important in understanding the physics...
A non-classical device structure namely self-aligned quasi-silicon-on-insulator (SOI) metal-oxide semiconductor (MOS) field-effect transistor with pi-shaped semiconductor conductive layer (SA-piFET) is presented, seeking to improve the performance and upgrade the reliability of the SOI-based devices. Designed to equip with a SA single crystal silicon channel layer, plus a natural source/drain (S/D)...
Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar-and Cl-based gas mixtures), and found to depend on plasma conditions, in contrast to those with conventional SiO2. For Ar-plasma, which was confirmed to induce a larger charging damage, both n- and p-ch MOSFETs with high-k gate stacks suffer...
Continuous scaling, necessary for enhanced performance and cost reduction, has pushed existing CMOS materials much closer to their intrinsic reliability limits, forcing reliability engineers to get a better understanding of circuit failure. This requires that designers will have to be very careful with phenomena such as high current densities or voltage overshoots. In addition to the reliability issues,...
Single, high energy, high LET, ions impacting on a Floating gate array at grazing or near-grazing angles lead to the creation of long traces of FGs with corrupted information. Every time a FG is crossed by a single ion, it experiences a charge loss which permanently degrades the stored information. If the ion crosses more than one FG, the threshold voltage of all those FGs interested by its track...
Hydrogenated amorphous silicon solar cells (a-Si:H) with a modified intrinsic layer (in this case a so called "gettering layer") show an interesting pattern of photo-degradation during long exposure to simulated sunlight. This work presents some initial results from a careful examination of the behaviour of minority carrier lifetimes and spectral responses of standard, normal cells and cells...
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