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Different nitrogen sources, pure N2, pure NO, and NO mixed with O2 (25% NO + 75% O2), are used to confirm the effects of N+, N2+, and NO+ ion implantation on the p-type conversion of ZnO:Al (AZO) films by plasma-immersion ion implantation (PIII) based on N-Al codoping mechanism. For the plasma of N2, NO, and NO mixed with O2, the major implanted ions are, respectively, N2+ ions, N2+ mixed with NO+...
With Vanadium ion implantation semi-insulating 4H-SiC layer has been investigated. For n-type and p-type 4H-SiC, resistivities have been reached 7.6times106middotcm and 1.6times1010middotcm respectively after 1650degC annealing. Perfect surface morphology has been observed using a simple Carbon coating film protection. The Vanadium energy levels in forbidden band of n-type 4H-SiC were confirmed as...
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