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The results of metal ion implantation into alumina ceramic are presented. We show that the of ceramic surface resistivity depends on the metal ion spcies used for the implantation, and decreases with increasing metal ion implantation dose, decreasing by 3–4 orders of magnitude from 1012 Ohm/sq. This approach provides an effective tool for bleeding off accumulated surface charge of ceramic components...
Plasma-based ion implantation (PBII) is the well-established technique for material surface modification. In this paper, we described the ballistic-mode PBII process in which repetitive high-voltage pulses are applied to the grid a few centimeters from a polyimide (PI) film target. The high-voltage pulse applied to the grid has the peak values of 30 kV, width of 2.5 , rise time of 1.5...
With Vanadium ion implantation semi-insulating 4H-SiC layer has been investigated. For n-type and p-type 4H-SiC, resistivities have been reached 7.6times106middotcm and 1.6times1010middotcm respectively after 1650degC annealing. Perfect surface morphology has been observed using a simple Carbon coating film protection. The Vanadium energy levels in forbidden band of n-type 4H-SiC were confirmed as...
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