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In this paper, we report on the formation of shallow junctions with high activation in both n+/p and p+/n Ge junctions using ion implantation and Flash Lamp Annealing (FLA). The shallowest junction depths formed for the n+/p and p+/n junctions were 9.5 nm and 10.7 nm with sheet resistances of 620 ohms/sq. and 414 ohms/sq., respectively. Additionally, by reducing knocked-on oxygen during ion implantation,...
To achieve an ultra-shallow junction formation with low resistivity, Cluster Carbon (CC) co-implantation for NMOS source drain and source drain extension condition are investigated. It is found that using CC co-implantation, Phosphorus (P) TED was suppressed and the lower junction depth Xj is achieved. The sheet resistivity Rs is increased with the increment of the Carbon dose, but the Rs×Xj product...
Boron retained dose and carrier activation after spike RTA in Cluster B18+ (Octadecaborane : B18H11+) implanted Si have been investigated comparing with BF2 beamline implanted Si. The retained dose estimated by SIMS depth profile integration is higher in B18 samples. In the same implant set dose, carrier concentrations in B18 samples show almost twice compared with BF2 samples although mobilities...
The resistivity of a quasi-one-dimensional structure fabricated without masks by 20-keV Ga+ focused ion beam (FIB) on crystalline Si substrates was investigated for the first time, along with an analysis of properties of implanted p+ layers. The junction depth of the 7?? off-axis implanted layer after annealing, which was measured by stain method, is 410 nm. The distribution profile was investigated...
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