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Effect of selenium segregation on the Schottky barrier height of the NiGe/Ge interface is examined. By carefully designed experiments, ion implantation damages in Ge can be avoided so that the pure effect of Se segregation can be examined. The best result achieved in this work is 0.1 eV barrier height reduction. A 10 times contact resistivity reduction is expected.
Using ultrasharp conductive tip atomic force microscopy (c-AFM), we have measured the current voltage (I-V) characteristics of titanium ions implanted into polystyrene thin film spin coated onto silicon substrate. The surface morphology and the electric current between the tip and sample have been obtained simultaneously on the nanometer scale. Initial island-like growths structures were observed...
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