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The authors investigate the enhanced thermal oxidation of tantalum using oxygen-ion implantation. A comparison of the electrical and dielectric properties is made between the oxygen-implanted thermal oxides and of those fabricated without implantation. The ion-implanted tantalum-oxide films are shown to be superior to the unimplanted layers for the fabrication of oxide capacitors.<<ETX>>
A model of charge transport in thermal SiO/sub 2/ with Si-implant-induced traps is proposed. In this model, traps are permitted to communicate with both the conduction band and the valence band of the Si substrate and poly-Si gate by means of direct tunneling. Electron injection in the SiO/sub 2/ conduction band, electron trapping by neutral and positively charged sites, and field depopulation of...
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