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Comparing with conventional spreading resistance profiling and differential Hall effect (DHE) methods, the continuous anodic oxidation technique/DHE (CAOT/DHE) technique may achieve more reasonable profiles of carrier concentration nh(x), mobility muh(x), and resistivity rho(x) and more reasonable carrier dose and xj in Si substrate. It has been successfully used to study ultralow energy doping techniques...
The temperature dependant electrical properties of InSbN alloys fabricated by directly nitrogen ion implanted into InSb substrate are investigated using Hall effect measurement. Intrinsic behavior is observed in the high temperature range (180-300 K). Higher nitrogen doping level and annealing temperature will result in lower electron carrier concentration. Phonon scattering dominates.
49BF2+ implanted wafers were annealed in the temperature range of 900degC and 1100degC using a single wafer rapid thermal furnace for 30 sec to 1800 sec under N2 ambient at atmospheric pressure. Sheet resistance and its uniformity were measured. Boron and fluorine depth profiles at different annealing temperatures and times were analyzed using secondary ion mass spectroscopy (SIMS). The minimum...
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