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Ge (100) wafers were implanted with 100keV Mn + ions with a dose of 2×10 16 ions/cm 2 at different temperatures, ranging from 300 to 573K. The surface morphology of implanted samples, analyzed with scanning electron microscopy and atomic force microscopy measurements, reveals for the 300–463K implant temperature range the formation of a surface swelled and porous film, containing...
Summary form only given. The effect of Sn exposure on extreme ultraviolet (EUV) reflective properties of candidate mirror materials is a critical issue for the commercial development of EUV lithography. Studies have been carried out at the interaction of materials with particles and components testing (IMPACT), a facility dedicated to the study of interactions of materials with energetic ions. Equipped...
Polyimide (PI) foils were implanted with 40 keV Fe + and Co + ions to the fluences of 2.5x10 16 -1.25x10 17 cm -2 at the ion current densities of 4, 8 and 12 μAcm -2 . Surface morphology and compositional alteration of the implanted polymer have been studied using atomic force microscopy, transmission electron microscopy, Rutherford...
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