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Ion implantation is one of the most common steps in the manufacture of integrated circuits. The characterization and visualization of process-induced particle contamination acting as masks that block implantation especially when the defects are not in a specific area of a chip takes a lot of effort. This paper describes the use of a Conductive Atomic Force Microscope (C-AFM) technique coupled with...
Angle-resolved X-ray photoelectron spectroscopy method was used to study self-sputtering effects of different n-type low-energy doping techniques, including conventional monoatomic 75As and 31P beam-line ion implants and AsH3 plasma doping (PLAD). It has been found that the self-sputtering effects of the beam-line implants correlate with the mass of ion species. As beam-line implant shows more serious...
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