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In this paper MIMOS and the R&D work on the nanomaterials for sensing elements and of material functionalization will be pursued towards application of sensors. The facility for nanomaterial growth is already available together with other equipments for material characterization such as atomic force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM)...
In this paper, Ti-doped ZnO TFTs on SiO2/Si substrates by simultaneous RF sputter of Zn and DC magnetron sputter of Ti are successfully fabricated. With undoped ZnO TFTs, as-grown Ti-doped ZnO are compared with post-annealed Ti-doped ZnO TFTs in the furnace at O2 atmosphere of 300 °C. As the annealing time increases, the electrical characteristics such as sub-threshold slop (SS) and on/off current...
In this work structural properties of TiO2 thin films doped with different amounts of Nd have been presented. Thin films were deposited on silicon substrates using high energy reactive magnetron sputtering process and for the measurements TiO2 doped with 0.84 at. % and 8.51 at. % of Nd have been selected. Diversification of the thin film surface was investigated using atomic force microscope. The...
Piezoelectric AlN films were grown on Si(001) substrates at 200??C by RF reactive magnetron sputtering technique. The optimization of the sputtering parameters (target-substrate distance, RF power, gas composition) resulted in the quasi-epitaxial growth of crystalline wurtzite AlN thin films. The structure and the morphology of the films were investigated by X-ray diffraction and atomic force microscopy...
SiC nanocrystals growth through the surface reaction between spin-on C60 dissolved in Carbon Disulphide (CS2) and Si substrate and 800degC (100 rains.) annealed has been investigated. Scanning Electron and Atomic Force Microscopy showed the crests of C60 clusters formed preferentially on the Si substrate steps with 40-60 nm cluster sizes. Silicon carbide nanocrystallite formation after anneal. has...
The thermal evaporation deposition technique was used to produce zinc oxide thin film onto p-type silicon substrate at room temperature. The prepared film was post annealed at different temperature from 400 to 800degC in O2 ambient atmosphere for 20 minutes. The effect of post annealing temperature on the structural properties and surface morphological of ZnO thin films have been studied by XRD and...
Doping of TiO2 with various metal ions can modify its different properties. In this work, structural properties of transparent Tb-doped TiO2 thin films have been outlined. Thin films were deposited by high energy reactive magnetron sputtering (HE RMS) from metallic Ti-Tb target on Si and SiO2 substrates. Thin films were investigated by means of energy disperse spectrometry (EDS), X-ray diffraction...
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