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InAs(N)/GaAs quantum dots were studied by x-ray diffraction, photoluminescence (PL) spectra, and atom force microscopy. Complicated blue shift in the PL peak energy with increasing nitrogen concentration was observed. This shift arises from the quantum size effect in the quantum dots, which dominates the nitrogen induced reductions of the InAsN band gap.
We present results obtained by different analysis methods as scanning tunneling microscopy (STM), atomic force microscopy (AFM), grazing incidence small angle X-ray scattering (GISAXS), and elastic recoil detection (ERD) on two similar semiconductor structures grown by molecular beam epitaxy (1) Si(111) substrate/Si buffer layer/B layer with σB=(2.6±δ)×1014 cm−2/Ge cap layer and (2) Si(111) substrate/Si...
Planar ordering of dense self-organized arrays of InP/In 0.48 Ga 0.52 P quantum dots is investigated using grazing incidence small-angle X-ray scattering (GISAXS), atomic force microscopy (AFM), and transmission electron microscopy (TEM). Using the two-dimensional Fourier transform of the AFM data together with the GISAXS data, we show that the degree...
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