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Nanostructured tin oxide (SnO2) thin films are prepared by pulsed laser deposition technique and the films are annealed at different temperatures viz. 300, 400, 500 and 600??C. The as-deposited and annealed films are characterized by X-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, UV-visible spectroscopy and photoluminescence spectroscopy. The films annealed at higher temperature...
ZnS thin films are prepared by pulsed laser deposition and the effect of annealing temperature on the structural and optical properties of ZnS films is investigated systematically using techniques like X-ray diffraction (XRD), Atomic force microscopy (AFM), UV-VIS spectroscopy and Photoluminescence spectroscopy (PL). The XRD pattern of the film annealed at 600??C show a less intense XRD peak of hexagonal...
In this paper we report the conclusions about the analysis between the characteristics of nitrided thin gallium nitride (GaN) films on GaAs and epitaxial GaN films on buffer nitrided films. We use the metal-organic chemical vapour deposition technique for synthesize these films. Also ones films were characterized using X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM).
InAs(N)/GaAs quantum dots were studied by x-ray diffraction, photoluminescence (PL) spectra, and atom force microscopy. Complicated blue shift in the PL peak energy with increasing nitrogen concentration was observed. This shift arises from the quantum size effect in the quantum dots, which dominates the nitrogen induced reductions of the InAsN band gap.
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