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Si atom and cluster interaction with 6H-SiC (0001) Si surfaces was studied using thermal desorption measurement and scanning tunneling microscopy (STM). Heating SiC at 1500 o C in an ultrahigh vacuum produced an inert surface. When this surface was exposed to Si vapor containing clusters, Si atoms and Si 2-4 clusters were observed to recoil at 400 o C. STM showed...
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