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The growth and structural characterization of Cd 1-x Zn x Te epitaxial films on (100) GaAs substrates is reported. The samples were obtained by a novel isothermal closed space sublimation technique, which was previously used for the growth of ZnTe in atomic layer epitaxy regime. For growing the films, a GaAs substrate is exposed alternately to the elemental sources (Cd,Zn,Te)...
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